ESDA6V8BLF 2-line, uni-directional, low-capacitance, transient voltage suppressors descriptions the ESDA6V8BLF is a bi-directional transient voltage suppressors (tvs) which provide a very high level protection for sensitive electronic components that may be subjected to electrostatic discharge (esd). it is designed to replace multilayer varistors (mlv) in consumer equipments applications such as mobile phone, notebook, pad, stb, lcd tv etc. the ESDA6V8BLF is based on solid-state silicon technology and offer unique electrical characteristics like lower clamping voltage and no device degrading compared to mlv. the ESDA6V8BLF is past esd transient voltage up to 8kv (contact) according to iec61000-4-2 and will withstand peak current up to 3.5a for 8/20us pulse to meet the iec61000-4-5. the ESDA6V8BLF is available in sot-23-3l package. standard products are pb-free and halogen-free. features ? working voltage: 5.0v max ? transient protection for each line according to iec61000-4-2 (esd): 8 kv (contact discharge) 15kv (air discharge) iec61000-4-4 (eft): 40a (5/50ns) iec61000-4-5 (surge): 3.5a (8/20 s) ? low leakage current ? small package applications ? cell phone ? notebook ? stb ? digital camera ? other electronics equipments sot-23 circuit diagram sot-23 b = device code ww = date code marking & pin configuration order information device package shipping ESDA6V8BLF-3/tr sot-23 3000/tape&reel gnd 12 3 i/o1 i/o2 bww 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings electronics characteristics (ta=25 o c, unless otherwise noted) 8/20us waveform iec61000-4-2 waveform parameter symbol rating unit peak pulse power (tp=8/20us) ppk 38 w peak pulse current (tp=8/20us) ipp 3.5 a esd voltage iec61000-4-2 air v esd 15 kv esd voltage iec61000-4-2 contact 8 junction temperature t j 125 o c operating temperature t op -40~85 o c lead temperature t l 260 o c storage temperature t stg -55~150 o c parameter symbol condition min. typ. max. unit reveres maximum working voltage v rwm 5.0 v reveres leakage current i r v rwm =5v 1.0 ua reveres breakdown voltage v br12 i t =1ma 6.5 7.7 8.1 v forward voltage v br21 i f =1ma 6.5 7.8 8.1 v clamping voltage v c ipp=1a tp=8/20us 8 v ipp=3.5a tp=8/20us 11 v junction capacitance c j f=1mhz, v r =0v any i/o pin to gnd 5.0 10 pf f=1mhz, v r =0v between i/o pins 2.5 5 pf t 60ns 30ns tr=0.7~1ns 10 90 100 peak pulse current (%) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 t 2 t 1 front time: t 1 = 1.25 ?? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t ESDA6V8BLF 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) clamping voltage vs. peak pulse current non-repetitive peak pulse power vs. pulse time esd clamping voltage (iec61000-4-2 +8kv contact) capacitance vs. reveres voltage power derating vs. temperature esd clamping voltage (iec61000-4-2 -8kv contact) 012345 2.5 3.0 3.5 4.0 4.5 5.0 f signal =1mhz v signal =50mvrms c - junction capacitance (pf) v r - reverse voltage (v) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 01234 4 8 12 16 pulse waveform: tp=8/20us v c - clamping voltage (v) ipp - peak pulse current (a) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse duration(us) ESDA6V8BLF 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot-23 recommend pcb layout (unit: mm) symbol dimensions in millimeter dimensions in inches min. max. min. max. a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e 0.950typ 0.037typ e1 1.800 2.000 0.071 0.079 l 0.500ref 0.022ref l1 0.300 0.500 0.012 0.020 0 8 0 8 ESDA6V8BLF 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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